As an Staff R&D Device Engineer at Fab2, you are the vital link bridging process development, electrical test, and integration. You will define initial transistor architectures and drive deep diagnostic analysis. In this hands-on, high-ownership role, your characterization and parameter extraction will contribute to achieving our targets in device performance, scaling, power, cost and production time.
Design device architectures and tailor novel transistor structures to meet device specifications
Execute tape-outs and test key designs
Perform electrical characterization (I-V/C-V) on transistors and MOSCAPs across process splits to establish baseline device behavior
Dissect complex electrical and physical data to pinpoint bottlenecks and inform material and flow improvements
Extract core device parameters to construct foundational technology performance models
Required experience
Ph.D. in Electrical Engineering, Applied Physics, Solid State Physics, or a closely related field
Rigorous understanding of advanced CMOS/MOSFET device physics and solid-state electronics fundamentals
Deep experience with semiconductor device measurement (I-V/C-V) and probe station operation
Strong skills in data analysis and scripting to accelerate testing and learning cycles.
A knack for translating complex device physics concepts clearly to cross-functional partners.
